go internal
assign name=VB n.value=(0)

#go atlas
go atlas simflags="-P 4"
#go atlas simflags="-V 5.30.0.R -P 4"

mesh width=300 outf=device.str master.out

x.m l=0 s=1
x.m l=60 s=1
#SiO2
y.m l=0 s=0.02
y.m l=-0.15 s=0.02
#IGZO
y.m l=0 s=0.002
y.m l=0.03 s=0.002

set Eg=2.8

## DOS based on the reference paper
# acceptor-like tail state
set nta=2.7049211961849614e+19
set wta=0.016207992875376998
# acceptor-like Gaussian state
set nga=1.8628671538341443e+18
set wga=0.7544111636992361
# donor-like tail state
set ntd=2.2984057189441376e+19
set wtd=0.0028272760862172058
# donor-like Gaussian state
set ngd=0
set egd=2.62
set wgd=0.1
#drift mobility
set mun=10.170835033336168

# IGZO channel doping
set cdp=9.611995670748552e+17

set T=303

set dosfile="dos.out"
set IdVglog="IdVg.log"

region num=1 user.material=a-IGZO y.min=0    y.max=0.03
region num=2 material=sio2 y.min=-0.15 y.max=0

elec num=1 name=gate   x.min=0  x.max=60 y.max=-0.15 y.min=-0.15
elec num=2 name=source x.min=0  x.max=5  y.max=0.03 y.min=0.03
elec num=3 name=drain  x.min=55 x.max=60 y.max=0.03 y.min=0.03

material material=a-IGZO user.default=Silicon  user.group=semiconductor \
                         affinity=4.3 eg300=$Eg nc300=5e18 nv300=5e19 \
                         permittivity=13.0 \
                         mun=$mun mup=0.1
doping uniform n.type concentration=$cdp region=1

contact num=1 n.poly
#
# We also define a workfunction for the source and drain that
# is very close to the conduction edge.  In the reference the
# authors observed that without a workfunction the results for
# ohmic boundaries were not significantly different than the
# Schottky model.
#
contact num=2 workf=4.33
contact num=3 workf=4.33

# models
models srh fermi temp=$T print
#
# Key to the characterization of amorphous materials is the
# definition of the states within the band gap.

#
# a-IGZO channel bulk DOS
defects reg=1 cont numa=128 numd=128 \
	nga=$nga ega=0.0 wga=$wga \
      	ngd=$ngd egd=$egd wgd=$wgd \
      	wta=$wta nta=$nta \
      	wtd=$wtd ntd=$ntd \
      	sigtae=1e-17 sigtah=1e-15 sigtde=1e-15 sigtdh=1e-17 \
      	siggae=2e-16 siggah=2e-15 siggde=2e-15 siggdh=2e-16 \
      	tfile="$dosfile"

## Interface properties
# energy of IF acceptor-like state
#set aelev=0.5
# density of IF acceptor-like state
#set adens=1e18
# energy of IF donor-like state
#set delev=3.15
# density of IF donor-like state
#set ddens=1e20

# interface properties
#inttrap e.level=$aelev acceptor density=$adens s.i degen=1 \ 
#	y.min=0.029 y.max=0.03 \
#	sign=1e-16 sigp=1e-14
#inttrap e.level=$delev donor density=$ddens s.i degen=1 \ 
#	y.min=0.029 y.max=0.03 \
#	sign=1e-16 sigp=1e-14

#
# Id-Vg simulation

models temp=303.0
solve init
solve prev

solve vdrain=0.1
solve vgate=0.0 name=gate
save outf=device.str

log outf=IdVg.log_303.0.log
solve vgate=1.0 vdrain=0.1 name=gate
solve vgate=2.0 vdrain=0.1 name=gate
solve vgate=4.0 vdrain=0.1 name=gate
solve vgate=6.0 vdrain=0.1 name=gate
solve vgate=8.0 vdrain=0.1 name=gate
solve vgate=10.0 vdrain=0.1 name=gate
solve vgate=12.0 vdrain=0.1 name=gate
solve vgate=14.0 vdrain=0.1 name=gate
solve vgate=16.0 vdrain=0.1 name=gate
solve vgate=18.0 vdrain=0.1 name=gate
solve vgate=20.0 vdrain=0.1 name=gate
log off