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| ◆ | プロジェクト研究報告｢大学連携 特異構造金属・無機融合高機能材料開発共同研究プロジェクト活動紹介」 | | --- | ◆ | | --- | --- | エレクトロニクス材料開発分野の活動状況 川原田洋神谷利夫 早稲田大学教授大学院先進理工学研究科ナノ理工学専攻(〒1698555 東京都新宿区大久保341) 東京工業大学教授応用セラミックス研究所 Research Progress on Materials for MEMS and Electronics Devices of Electronics Materials Development Group; Hiroshi Kawarada and Toshio Kamiya(Graduate School of Advanced Science and Engineering, Waseda University, Tokyo. Materials & Structures Labora- tory, Tokyo Institute of Technology, Tokyo) Keywords: piezoelectric materials, carbon nanotube(CNT), biosensing, aIGZO TFT, topological insulator 2015年3 月2 日受理[doi:10.2320/materia.54.232] . マイクロエレクトロメカニカルシステムデバイス 用無鉛圧電セラミックス薄膜 有害元素含有材料の使用に関する規制が，欧州を中心に進められている．現在製品化されている圧電体セラミックス材料は鉛系酸化物のPb(Zr, Ti)O3 (PZT)系が中心なため，無鉛圧電材料の開発は急務である．種々の無鉛材料の中で(K, Na)NbO3 (KNN)は，比較的高いキュリー温度と優れた圧電特性を有する化合物として注目されている．名古屋大学エコトピア科学研究所は，高均質，精密な組成制御が容易で，低温合成が可能な金属有機化合物前駆体溶液での化学プロセスにより，KNN 系化合物の薄膜化を行っている．所望の特性を得るためのKNN 薄膜の特性制御のため，KNN に異種元素を置換あるいはドープする．多価イオンとなるMn のドープでは，大きな問題である電気絶縁性の低下を解決している．その機構は，Mn2＋あるいはMn3＋の状態で薄膜中に存在するMn イオンにより薄膜中のキャリアがトラップされ，絶縁性の向上が得られる(1)．現在，早稲田大学ナノ理工学研究機構と共同で発現する特性の評価と薄膜のデバイス化を目指した検討を行っている．KNN 系薄膜における電界誘 ![](data:image/png;base64...) 図1 微細加工後のカンチレバー型(K, Na)NbO3 系薄 膜の電子顕微鏡写真． 昇が起こり易く，そのような高温環境下では半導体デバイスの性能低下も懸念され，接合技術なども含めたデバイス内の各要素技術の高度化も不可欠となっている．現在，このような接合部には有害物質であるPb を含む高融点はんだ(Pb5Sn など)が主に用いられているが，環境意識の高まりから，有害物質を含まない代替材料とその接合プロセスの確立が喫緊の課題の一つとなっている．そこで，大阪大学接合科学研究所は，早稲田大学ナノ理工学研究機構との共同研究で，パワーデバイスなどに使用されている高鉛含有はんだ | 起歪み特性をはじめとした様々な電気的特性の解析，微細加 | (Pb5Sn, | Pn10Sn はんだなど)の代替材料，及びそのため | | --- | --- | --- | 工がその特性に及ぼす影響について，材料技術とデバイス加工技術を融合したカンチレバー型アクチュエーターの開発(図)，さらには振動など自然エネルギーの電気エネルギーへの変換計測への展開を進めている． の代替接合プロセスの確立などを目的とし，新たなナノポーラス構造を利用した微細接合技術の構築に取り組んでいる．これまでにAuAg 合金より作製したAu ナノポーラス材料(図)を利用し，接合プロセスを制御することで，Cu/Cu 接合やAu めっき/Au めっき接合が可能であり，高鉛含有はん | . | ナノポーラス構造を利用した微細接合技術 | だと同等の20 MPa 以上の接合強度を得られることなどを明 | | --- | --- | --- | らかにしてきた(2)(3)． 電力エネルギーの効率と再生可能エネルギーの比率を高め | るため，パワーモジュールやエネルギーモジュールが注目さ | . | カーボンナノチューブによるSiC パワー半導体用 | | --- | --- | --- | | れている．パワーモジュールは動作時に電流を制御するた | | 電極 | め，大電流を制御するほど発熱量が大きくなり，またモジュ ールの小型化・軽量化では部品等の高密度搭載により温度上 名古屋大学エコトピア科学研究所で開発されたSiC 表面  プロジェクト報告 | **◆ Project Research Report: "Introduction to the Joint Research Project for the Development of High-Functionality Materials through Fusion of Unique Structure Metals and Inorganics in University Collaboration" ◆** Activity Status of Electronics Materials Development Group Hiroshi Kawarada and Toshio Kamiya (Graduate School of Advanced Science and Engineering, Waseda University, Tokyo. Materials & Structures Laboratory, Tokyo Institute of Technology, Tokyo) Keywords: piezoelectric materials, carbon nanotube (CNT), bio-sensing, a-IGZO TFT, topological insulator Received March 2, 2015 [doi:10.2320/materia.54.232] **Microelectromechanical System Devices Using Lead-Free Piezoelectric Ceramic Thin Films** Regulations regarding the use of materials containing hazardous elements are progressing, mainly in Europe. Since currently commercialized piezoelectric ceramic materials are mainly lead-based oxide Pb(Zr, Ti)O3 (PZT) systems, the development of lead-free piezoelectric materials is an urgent issue. Among various lead-free materials, (K, Na)NbO3 (KNN) is attracting attention as a compound with a relatively high Curie temperature and excellent piezoelectric characteristics. The EcoTopia Science Institute at Nagoya University is thinning KNN-based compounds using a chemical process with a metal-organic compound precursor solution, which allows for high homogeneity, precise composition control, and low-temperature synthesis. To control the characteristics of KNN thin films to obtain desired properties, hetero elements are substituted or doped into KNN. Doping with the multivalent ion Mn solves the major problem of decreased electrical insulation. The mechanism is that Mn ions present in the thin film in the Mn2+ or Mn3+ state trap carriers in the thin film, resulting in improved insulation (1). Currently, we are conducting evaluations of the characteristics and examining the device application of thin films in collaboration with the Waseda University Organization for University Research Initiatives. Figure 1: Electron micrograph of a cantilever-type (K, Na)NbO3-based thin film after microfabrication. **Micro-Joining Technology Utilizing Nanoporous Structures** In order to increase the efficiency of electrical energy and the ratio of renewable energy, power modules and energy modules are attracting attention. Power modules control current during operation, and the amount of heat generated increases as the current being controlled increases. In addition, miniaturization and weight reduction of modules cause temperature increases due to high-density mounting of components, raising concerns about performance degradation of semiconductor devices in such high-temperature environments. Advancement of each elemental technology within the device, including bonding technology, is also essential. Currently, high-melting-point solders containing harmful substances such as Pb (Pb-5Sn, etc.) are mainly used for such joints, but due to increasing environmental awareness, establishing alternative materials that do not contain harmful substances and their joining processes is an urgent issue. Therefore, the Joining and Welding Research Institute at Osaka University is working on the construction of a new micro-joining technology utilizing nanoporous structures in joint research with the Waseda University Organization for University Research Initiatives, with the aim of establishing alternative materials for high-lead-containing solders (Pb-5Sn, Pb-10Sn solders, etc.) used in power devices, and alternative joining processes for them. By controlling the joining process using Au nanoporous materials made from Au-Ag alloys (Figure 2), Cu/Cu joining and Au plating/Au plating joining are possible, and it has been clarified that a joining strength of 20 MPa or more, equivalent to that of high-lead-containing solder, can be obtained (2)(3). We are promoting the development of cantilever-type actuators (Figure 3) that combine material technology and device processing technology, as well as the development of measurement of conversion of natural energy such as vibration into electrical energy, regarding the analysis of various electrical characteristics including strain sensitivity and the effect of microfabrication on those characteristics. **Electrode for SiC Power Semiconductor Using Carbon Nanotubes** The EcoTopia Science Institute at Nagoya University developed SiC surface Project Report | **◆ Project Research Report: "Introduction to the Joint Research Project for the Development of High-Functionality Materials through Fusion of Unique Structure Metals and Inorganics in University Collaboration" ◆** Activity Status of Electronics Materials Development Group Hiroshi Kawarada and Toshio Kamiya (Graduate School of Advanced Science and Engineering, Waseda University, Tokyo. Materials & Structures Laboratory, Tokyo Institute of Technology, Tokyo) Keywords: piezoelectric materials, carbon nanotube (CNT), bio-sensing, a-IGZO TFT, topological insulator Received March 2, 2015 [doi:10.2320/materia.54.232] **Microelectromechanical System Devices Using Lead-Free Piezoelectric Ceramic Thin Films** Regulations regarding the use of materials containing hazardous elements are progressing, mainly in Europe. Since currently commercialized piezoelectric ceramic materials are mainly lead-based oxide Pb(Zr, Ti)O3 (PZT) systems, the development of lead-free piezoelectric materials is an urgent issue. Among various lead-free materials, (K, Na)NbO3 (KNN) is attracting attention as a compound with a relatively high Curie temperature and excellent piezoelectric characteristics. The EcoTopia Science Institute at Nagoya University is thinning KNN-based compounds using a chemical process with a metal-organic compound precursor solution, which allows for high homogeneity, precise composition control, and low-temperature synthesis. To control the characteristics of KNN thin films to obtain desired properties, hetero elements are substituted or doped into KNN. Doping with the multivalent ion Mn solves the major problem of decreased electrical insulation. The mechanism is that Mn ions present in the thin film in the Mn2+ or Mn3+ state trap carriers in the thin film, resulting in improved insulation (1). Currently, we are conducting evaluations of the characteristics and examining the device application of thin films in collaboration with the Waseda University Organization for University Research Initiatives. Figure 1: Electron micrograph of a cantilever-type (K, Na)NbO3-based thin film after microfabrication. **Micro-Joining Technology Utilizing Nanoporous Structures** In order to increase the efficiency of electrical energy and the ratio of renewable energy, power modules and energy modules are attracting attention. Power modules control current during operation, and the amount of heat generated increases as the current being controlled increases. In addition, miniaturization and weight reduction of modules cause temperature increases due to high-density mounting of components, raising concerns about performance degradation of semiconductor devices in such high-temperature environments. Advancement of each elemental technology within the device, including bonding technology, is also essential. Currently, high-melting-point solders containing harmful substances such as Pb (Pb-5Sn, etc.) are mainly used for such joints, but due to increasing environmental awareness, establishing alternative materials that do not contain harmful substances and their joining processes is an urgent issue. Therefore, the Joining and Welding Research Institute at Osaka University is working on the construction of a new micro-joining technology utilizing nanoporous structures in joint research with the Waseda University Organization for University Research Initiatives, with the aim of establishing alternative materials for high-lead-containing solders (Pb-5Sn, Pb-10Sn solders, etc.) used in power devices, and alternative joining processes for them. By controlling the joining process using Au nanoporous materials made from Au-Ag alloys (Figure 2), Cu/Cu joining and Au plating/Au plating joining are possible, and it has been clarified that a joining strength of 20 MPa or more, equivalent to that of high-lead-containing solder, can be obtained (2)(3). We are promoting the development of cantilever-type actuators (Figure 3) that combine material technology and device processing technology, as well as the development of measurement of conversion of natural energy such as vibration into electrical energy, regarding the analysis of various electrical characteristics including strain sensitivity and the effect of microfabrication on those characteristics. **Electrode for SiC Power Semiconductor Using Carbon Nanotubes** The EcoTopia Science Institute at Nagoya University developed SiC surface Project Report